Gain characteristics of strained quantum well lasers

• DOI: 10.1063/1.102647
• Publication Date: 2002-07-26T13:05:16Z
• Authors: D. F. Welch; W. Streifer; C. F. Schaus; S. Sun; P. L. Gourley
• Keywords: Active layer

InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents 115 A/cm2, transparency 50 optical losses 3 cm−1, and wavelengths to 960 nm for compositions 20%. Gain coefficient measurements indicate an increase from 0.0535 0.0691 cm μm/A lasers 0% InAs 10–20% InAs, respectively. The maximum output power achieved a device 100 μm aperture is W cw.