Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates

• DOI: 10.1063/1.103379
• Publication Date: 2002-07-26T12:51:31Z
• Authors: M. Geddo; B. Pivac; A. Borghesi; A. Stella; M. Pedrotti
• Keywords: silicio epitassiale; 0103 physical sciences; impurezze di ossigeno; assorbimento ottico; 530; 01 natural sciences

Oxygen solid-state outdiffusion from the substrate to epitaxial layer was investigated by using micro-Fourier transform infrared measurements in a transversal wafer cross-section configuration. Interstitial oxygen concentration, obtained analyzing 1107 cm−1absorption band, indicated that an content, clearly detectable technique, is present near interface. To our knowledge this first evidence of into layer.