Atomic layer epitaxy of AlGaAs

• DOI: 10.1063/1.103675
• Publication Date: 2002-07-26T12:51:31Z
• Authors: J. R. Gong; D. Jung; N. A. El-Masry; S. M. Bedair
• Keywords: 02 engineering and technology; 0210 nano-technology

Atomic layer epitaxy (ALE) has been employed to grow AlGaAs in the temperature range 550–700 °C. Monolayer growth was achieved independent of the column III flux. Al incorporates during ALE more efficiently than in metalorganic chemical vapor deposition (MOCVD). The ALE films grown at low temperature have superior photoluminescence properties when compared with the MOCVD-grown films. The as-grown ALE films are p type with carrier concentrations in the 1017–1019/cm3 range, depending on the growth conditions.