Deposition and characterization of fullerene films

Sublimation
DOI: 10.1063/1.106095 Publication Date: 2002-07-26T13:31:59Z
ABSTRACT
Thermal sublimation of pure C60 and C70 has been used for depositing well-characterized fullerene films on a variety substrates. Film purity is determined by infrared absorption spectra the extent crystallinity face-centered cubic structure x rays. Thickness-dependent optical electrical measurements reveal uniform over thickness range 200–1000 Å. We obtain coefficients having values between those Si Ge relative permittivity value close to that amorphous SiO2.
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