Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

• DOI: 10.1063/1.107123
• Publication Date: 2002-07-26T12:49:10Z
• Authors: W. Xie; D. C. Grillo; R. L. Gunshor; M. Kobayashi; H. Jeon; J. Ding; A. V. Nurmikko; G. C. Hua; N. Otsuka
• Keywords: 0103 physical sciences; 01 natural sciences

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type is realized by using a nitrogen rf plasma cell. The diode formed homoepitaxial GaAs buffer layers molecular beam epitaxy. S fraction of the alloy selected to provide lattice match between II-VI active region and buffer; result an having dislocation density below 105/cm−2. letter discusses emission characteristics as x-ray rocking curve transmission electron microscopy characterization structures.