Single transistor static memory cell: Circuit application of a new quantum transistor

• DOI: 10.1063/1.108784
• Publication Date: 2002-07-26T13:34:19Z
• Authors: J. Chen; C. H. Yang; R. A. Wilson; C. E. C. Wood
• Keywords: Static induction transistor; Realization (probability); Multiple-emitter transistor; Heterostructure-emitter bipolar transistor

An experimental realization and application of a new quantum transistor is reported herein. The conduction mechanism resonant-tunneling process between regions two-dimensional density states. As result, the displays current-voltage characteristics. A static memory cell using single demonstrated.