Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

• DOI: 10.1063/1.112478
• Publication Date: 2002-07-26T13:39:01Z
• Authors: V. Craciun; J. Elders; J. G. E. Gardeniers; Ian W. Boyd
• Keywords: Pulsed Laser Deposition; Deposition

Thin films of ZnO have been deposited on glass and silicon substrates by the pulsed laser deposition technique employing a KrF (λ=248 nm). The influence parameters, such as substrate temperature, oxygen pressure, fluence properties grown films, has studied. All over rather wide range conditions were found to be optically transparent, electrically conductive, c-axis oriented, with full width at half-maximum (FWHM) (002) x-ray reflection line being very often less than 0.25°. Under optimized pressure conditions, highly oriented having FWHM value 0.15° optical transmittance around 85% in visible region spectrum temperature only 350 °C. These are among best yet reported for any low temperature.