Carrier lifetimes in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers

• DOI: 10.1063/1.115272
• Publication Date: 2002-07-26T13:40:46Z
• Authors: W. J. Choi; S. Lee; Y. Kim; D. Woo; S. K. Kim; S. H. Kim; J. I. Lee; K. N. Kang; J. H. Chu; S. K. Yu; J. C. Seo; D. Kim; K. Cho
• Keywords: Carrier lifetime

Time resolved photoluminescence (PL) characteristics of a SiN cap disordered GaAs/AlGaAs multiple quantum well (MQW) structure exhibit decrease in carrier lifetime conjunction with an increase disordering (QWD) as the capping layer thickness is increased. The attributed to enhanced trapping due defects introduced during dielectric and relaxation momentum conservation radiative recombination by QWD. Potential applications these effects on high speed optical devices such laser diodes (LD’s) modulators are discussed.