Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots

• DOI: 10.1063/1.119347
• Publication Date: 2002-07-26T13:29:38Z
• Authors: J. Phillips; K. Kamath; X. Zhou; N. Chervela; P. Bhattacharya
• Keywords: Physics; Science; 02 engineering and technology; 0210 nano-technology

We report far-infrared absorption in directly doped self-organized InAs quantum dots. Photoluminescence spectra demonstrate a blue shift in peak intensity for increasing doping in the quantum dots. Far-infrared absorption measurements using a Fourier transform infrared spectrometer show absorption in the range of 13–18 μm for quantum dots with Al0.15Ga0.85As and GaAs as the barrier material.