High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy

• DOI: 10.1063/1.123197
• Publication Date: 2002-07-26T12:58:15Z
• Authors: R. Langer; A. Barski; J. Simon; N. T. Pelekanos; O. Konovalov; R. André; Le Si Dang
• Keywords: [PHYS]Physics [physics]; 02 engineering and technology; 0210 nano-technology; 530

Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror 473 nm was as high 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us characterize structural parameters of mirrors. We show that, in spite substantial strain relaxation occurring our samples, is still possible. In addition, we that growth interruption heterointerfaces crucial achieving reflectivities.