Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

• DOI: 10.1063/1.126199
• Publication Date: 2002-07-26T13:29:07Z
• Authors: L. Kim; J. Kim; D. Jung; Y. Roh
• Keywords: 0103 physical sciences; 01 natural sciences

The Al/CeO2/Si metal–insulator–semiconductor (MIS) structure showed a capacitance–voltage (C–V) hysteresis, which could be controlled by variation of the CeO2 thickness. For a sample with 3000 Å CeO2, hysteresis width as high as ∼1.8 V was obtained. For nonvolatile field-effect transistors, the Al/CeO2/Si MIS structure with a reliable and controllable C–V hysteresis could be an alternative to metal–ferroelectric–semiconductor structures containing unstable, multicomponent ferroelectric materials.