Superconducting device with transistor-like properties including large current amplification

• DOI: 10.1063/1.127005
• Publication Date: 2002-07-26T12:58:15Z
• Authors: G. P. Pepe; G. Ammendola; G. Peluso; A. Barone; L. Parlato; E. Esposito; R. Monaco; N. E. Booth
• Keywords: stacked junctions; quasiparticle trapping; 0103 physical sciences; Josephson effect; 01 natural sciences; 7. Clean energy; current amplification

We have fabricated and studied a stacked superconducting double tunnel junction device with transistor-like properties. The intermediate electrode is bilayer consisting of Nb film together an Al that acts as quasiparticle trap. Large current gains more than 50 are observed at 4.2 K when the layer normal. operation highly directional. Results explained on basis trapping quasiparticles from superconductor into normal metal, conversion relaxation energy electronic excitations. Similar devices should wide applications in low-temperature measurement detection systems.