Room temperature synthesis of c-AlN thin films by nitrogen-ion-assisted pulsed laser deposition

• DOI: 10.1063/1.1320010
• Publication Date: 2002-07-26T13:59:53Z
• Authors: Z. M. Ren; Y. F. Lu; H. Q. Ni; T. Y. F. Liew; B. A. Cheong; S. K. Chow; M. L. Ng; J. P. Wang
• Keywords: Pulsed Laser Deposition; Laser Ablation; Crystal (programming language); Deposition

Cubic aluminum nitride (c-AlN) thin films have been deposited at room temperature on silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The exhibit good crystal properties with sharp x-ray diffraction peaks. influences the nitrogen ion energy morphological, compositional, and electronic studied. ions can effectively promote formation Al–N bonds improve films. A 400 eV is proposed to deposit high quality c-AlN