Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

• DOI: 10.1063/1.1326461
• Publication Date: 2002-07-26T14:14:52Z
• Authors: J. W. Dong; L. C. Chen; J. Q. Xie; T. A. R. Müller; D. M. Carr; C. J. Palmstrøm; S. McKernan; Q. Pan; R. D. James
• Keywords: Tetragonal crystal system

Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex x-ray diffraction, and cross-sectional view transmission microscopy patterns confirm the single-crystal growth of Ni2MnGa. The grow with tetragonal structure (a=b=5.79 Å c=6.07 Å). Magnetic measurements using vibrating sample superconducting quantum interference device magnetometers reveal to an in-plane easy axis Curie temperature ∼350 K.