Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

• DOI: 10.1063/1.1402152
• Publication Date: 2002-07-26T12:44:22Z
• Authors: Yoon-Hae Kim; Moo Sung Hwang; Hyeong Joon Kim; Jin Yong Kim; Young Lee
• Keywords: Silicon oxide; Electronegativity; Fluorine; Carbon fibers

Bonding characteristics of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide (SiOF) and carbon-incorporated (SiOC) films prepared by plasma enhanced chemical vapor deposition were investigated Fourier transform infrared spectroscopy (FTIR). The frequency Si–O stretching vibration mode in SiOF film shifted to higher wave number (blueshift) with the increase fluorine incorporation, while that SiOC lower (redshift) as carbon content increased. In N2-annealed film, slightly number. To elucidate these phenomena, we have developed “bonding structure model” based on electronegativity an atom. shifts observed FTIR spectra well explained this model.