Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films

• DOI: 10.1063/1.1405811
• Publication Date: 2002-07-26T12:44:22Z
• Authors: W. I. Park; Gyu-Chul Yi; H. M. Jang
• Keywords: ROOM-TEMPERATURE; SUPERLATTICES; ALLOYS; ULTRAVIOLET-LASER; EXCITONS; ZNO; MGXZN1-XO; 02 engineering and technology; EMISSION; 0210 nano-technology

High-quality Zn1−xMgxO(0.00⩽x⩽0.49) thin films were epitaxially grown at 500–650 °C on Al2O3(00⋅1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in up to 49 at. %, c-axis constant of decreased from 5.21 5.14 Å and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, near-band-edge emission peak position showed blueshifts 100, 440, 685 meV levels 9, 29, respectively. Photoluminescent properties alloy are also discussed.