Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

• DOI: 10.1063/1.1479455
• Publication Date: 2002-07-26T14:23:32Z
• Authors: A. Dadgar; M. Poschenrieder; J. Bläsing; K. Fehse; A. Diez; A. Krost
• Keywords: Equivalent series resistance

Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The ∼2.8-μm-thick structure was using a low-temperature AlN:Si seed layer and two interlayers for stress reduction. In current–voltage measurements, low turn-on voltages series resistance of 55 Ω observed vertically contacted diode. By in situ insertion SixNy mask, the luminescence intensity is significantly enhanced. A light output power 152 μW at current 20 mA wavelength 455 nm achieved.