Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth

• DOI: 10.1063/1.1535237
• Publication Date: 2003-03-06T23:03:54Z
• Authors: Bernd Jenichen; Wolfgang Braun; Vladimir M. Kaganer; Alexander G. Shtu...; Lutz Däweritz; Carl-Günther Schulz; Klaus H. Ploog; Alexei Erko
• Keywords: Diffractometer; Wiggler; Crystal (programming language); Ultra-high vacuum

A combination of a molecular beam epitaxy (MBE) machine and six circle diffractometer has been constructed at dedicated wiggler beamline the storage ring BESSY II for in situ investigations III–V compound crystal growth. The growth conditions our system reach high MBE standard with noncooled base pressure 2×10−10 mbar. fast entry load lock is available sample exchange. Large-area Be windows ultrahigh vacuum chamber allow us to measure reflections entrance exit angles up 45°, i.e., large perpendicular momentum transfers are possible. In reflection energy electron diffraction x-ray fluorescence measurements can be performed simultaneously scattering. GaAs(001) surface prepared examined reveals terrace widths 450 nm β(2×4) reconstruction domain sizes 210 nm. possibility time-resolved studies demonstrated by observation intensity oscillations during layer-by-layer homoepitaxial on GaAs(001)β(2×4) surface. resolution functions experiment determined.