Simulation of Schottky barrier tunnel transistor using simple boundary condition

• DOI: 10.1063/1.1569415
• Publication Date: 2003-04-17T22:07:29Z
• Authors: Moongyu Jang; Kicheon Kang; Seongjae Lee; Kyoungwan Park
• Keywords: Drain-induced barrier lowering; Metal–semiconductor junction; Voltage drop

The current–voltage characteristics of a Schottky barrier tunnel transistor (SBTT) are simulated by considering the internal voltage drop at and using current continuity condition between tunneling channel current. numerical results show typical behaviors as can be found in many experimental results. From these results, significantly higher threshold is expected for SBTT compared to conventional metal–oxide–semiconductor field-effect transistors, because suppression low gate voltage. For nanometer-size device application, metal should used decrease