Surface-scattering effects in polycrystalline silicon thin-film transistors

• DOI: 10.1063/1.1571960
• Publication Date: 2003-05-01T22:04:38Z
• Authors: A. Valletta; L. Mariucci; G. Fortunato; S. D. Brotherton
• Keywords: Polycrystalline silicon; Phonon scattering; Electron Mobility; Field effect

Mobility reduction, induced at high gate fields by scattering with surface acoustic phonons and roughness, has been investigated in self-aligned polycrystalline silicon (polysilicon) thin-film transistors (TFTs). The analysis of this effect can be influenced the presence parasitic resistance effects, a precise evaluation obtained measuring transfer characteristics devices different channel lengths. In way, we could reliably determine mobility reduction effect, which was then analyzed using two-dimensional numerical simulations. polysilicon TFTs accurately described Lombardi’s model, originally proposed for c-Si metal-oxide-semiconductor field-effect transistors.