Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers

• DOI: 10.1063/1.1628378
• Publication Date: 2003-12-16T23:16:29Z
• Authors: G. Bisognin; D. De Salvador; C. Mattevi; M. Berti; A. V. Drigo; G. Ciatto; L. Grenouillet; P. Duvaut; P. Gilet; H. Mariette
• Keywords: Lattice constant; Lattice (music); Rutherford backscattering spectrometry

We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random channeling geometry, allowed accurate quantification of the total amount N InxGa1−xNyAs1−y/GaAs GaNyAs1−y/GaAs epitaxial systems (0.038<x<0.044, 0.015<y<0.045), a precise localization nitrogen atoms into lattice. All were found on substitutional positions. This information was then exploited to correlate relaxed lattice parameter epilayers obtained by high-resolution x-ray diffraction concentration, taking account elasticity theory, allowing verification validity Vegard’s rule whole range investigated concentrations for alloys. The effect incorporation has been be same ternary quaternary