High extraction efficiency InGaN micro-ring light-emitting diodes

• DOI: 10.1063/1.1630352
• Publication Date: 2003-11-28T23:01:14Z
• Authors: H. W. Choi; M. D. Dawson; P. R. Edwards; R. W. Martin
• Keywords: Wide-bandgap semiconductor

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices electrical characteristics similar to those conventional broad-area devices. However, due the large surface areas provided by sidewalls, extraction efficiency is greatly enhanced. Intense light emission at periphery micro-rings observed upon excitation electron beam, suggesting scattering photons which are extracted through sidewalls. provide a doubling in total output compared reference LED equal light-generation area.