Hole mobility in organic single crystals measured by a “flip-crystal” field-effect technique

• DOI: 10.1063/1.1767292
• Publication Date: 2004-08-02T22:45:02Z
• Authors: C. Goldmann; S. Haas; C. Krellner; K. P. Pernstich; D. J. Gundlach; B. Batlogg
• Keywords: Rubrene; Pentacene; Tetracene; Electron Mobility; Crystal (programming language); Contact resistance; Organic semiconductor

We report on single crystal high mobility organic field-effect transistors prepared prefabricated substrates using a “flip-crystal” approach. This method minimizes handling and avoids direct processing of the that may degrade transistors' electrical characteristics. A chemical treatment process for substrate ensures reproducible device quality. With limited purification starting materials, hole mobilities 10.7, 1.3, 1.4cm2∕Vs have been measured rubrene, tetracene, pentacene crystals, respectively. Four-terminal measurements allow extraction “intrinsic” transistor channel resistance parasitic series contact resistances. The technique employed in this study shows potential as general studying charge transport field-accumulated carrier channels near surface crystals.