Optical and electrical transport properties in silicon carbide nanowires

• DOI: 10.1063/1.1781749
• Publication Date: 2004-08-10T22:58:26Z
• Authors: Han-Kyu Seong; Heon-Jin Choi; Sang-Kwon Lee; Jung-Il Lee; Doo-Jin Choi
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100nm and lengths of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of ⟨111⟩. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2×10−2Ωcm for 0V of gate voltage and 15cm2∕(Vs), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties.