AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

• DOI: 10.1063/1.1831557
• Publication Date: 2004-12-08T23:42:38Z
• Authors: J. P. Zhang; X. Hu; Yu. Bilenko; J. Deng; A. Lunev; M. S. Shur; R. Gaska; M. Shatalov; J. W. Yang; M. A. Khan
• Keywords: Pulsed Power; Continuous wave

Optimization of the migration-enhanced metalorganic chemical vapor deposition and further optimization contact active layer design for 280nm light-emitting diodes resulted in large improvement cw pulsed output power a superior spectrum purity. The ratio main peak to background luminescence determined by detection system is higher than 2000:1 at 20mA dc. on-wafer was measured be 255μW popped up exceeding 1mW packaged device under 25mA dc 9mW pulse 200mA. maximum wall-plug-efficiency 0.67% obtained