Room temperature ferromagnetic n-type semiconductor in (In1−xFex)2O3−σ

• DOI: 10.1063/1.1851618
• Publication Date: 2005-01-24T23:05:02Z
• Authors: Jun He; Shifa Xu; Young K. Yoo; Qizhen Xue; Hyung-Chul Lee; Shifan Cheng; X.-D. Xiang; Gerald F. Dionne; Ichiro Takeuchi
• Keywords: 0103 physical sciences; 01 natural sciences

The thin film synthesis and characterization of room temperature ferromagnetic semiconductor (In1−xFex)2O3−σ are reported. The high thermodynamic solubility, up to 20%, of Fe ions in the In2O3 is demonstrated by a combinatorial phase mapping study where the lattice constant decreases almost linearly as Fe doping concentration increases. Extensive structural, magnetic and magneto-transport including anomalous Hall effect studies on thin film samples consistently point to a source of magnetism within the host lattice rather than from an impurity phase.