Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

• DOI: 10.1063/1.1856137
• Publication Date: 2005-01-19T23:25:25Z
• Authors: O. Auciello; W. Fan; B. Kabius; S. Saha; J. A. Carlisle; R. P. H. Chang; C. Lopez; E. A. Irene; R. A. Baragiola
• Keywords: High-κ dielectric; Equivalent oxide thickness; Band offset; Metal gate

Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal–oxide–semiconductor (CMOS) gates. A trade-off between dielectric band-offset height generally observed gate oxides. Combining TiO2 Al2O3, two extremes permittivity band offset, we produced a TixAl1−xOy (TAO) oxide layer k=∼30 low leakage high-k We developed temperature oxidation process, following room sputter-deposition TiAl layers, to produce ultrathin TAO layers Si subatomic or no SiO2 silicide interface formation. demonstrated <0.5nm equivalent thickness thermal stability under rapid annealing up about 950°C. The data presented here provide insights into fundamental physics materials science its potential application as CMOS devices.