Atomic layer deposition of hafnium oxide on germanium substrates

• DOI: 10.1063/1.1856221
• Publication Date: 2005-03-04T23:04:35Z
• Authors: Annelies Delabie; Riikka L. Puurunen; Bert Brijs; Matty Caymax; Thierry Conard; Bart Onsia; Olivier Richard; Wilfried Vandervorst; Chao Zhao; Marc M. Heyns; Marc Meuris; Minna M. Viitanen; Hidde H. Brongersma; Marco de Ridder; Lyudmila V. Gonch...; Eric Garfunkel; Torgny Gustafsson; Wilman Tsai
• Keywords: High-κ dielectric; Hafnium

Germanium combined with high-κ dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate severe scaling requirements sub-45-nm generations. Therefore, we have studied atomic layer deposition (ALD) of HfO2 dielectric layers on HF-cleaned Ge substrates. In this contribution, describe growth characteristics, bulk properties, and interface. Substrate-enhanced occurs: per cycle is larger in first reaction cycles than steady 0.04nm. The enhanced goes together island growth, indicating that more a monolayer coverage required closed film. A achieved after depositing 4–5HfO2 monolayers, corresponding about 25 ALD cycles. Cross-sectional transmission electron microscopy images show thinner 3nm amorphous deposited, while local epitaxial crystallization occurred thicker films. Other properties similar Si According physical characterization study, can be used Ge-based devices gate oxide thickness scaled down 1.6nm.