Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

• DOI: 10.1063/1.1925320
• Publication Date: 2005-05-06T22:12:21Z
• Authors: D. N. Jamieson; C. Yang; T. Hopf; S. M. Hearne; C. I. Pakes; S. Prawer; M. Mitic; E. Gauja; S. E. Andresen; F. E. Hudson; A. S. Dzurak; R. G. Clark
• Keywords: Superconductivity; Physical Sciences; 0103 physical sciences; 0204 (four-digit-FOR); 020499 Condensed Matter Physics not elsewhere classified; Condensed Matter Physics - Electronic and Magnetic Properties; 530; 01 natural sciences

We demonstrate a method for the controlled implantation of single ions into silicon substrate with energy sub-20-keV. The is based on collection electron-hole pairs generated in by impact ion. have used to implant 14-keV P31 through nanoscale masks as route fabrication devices donors silicon.