Growth of high-quality ZnMgO epilayers and ZnO∕ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire

• DOI: 10.1063/1.2034113
• Publication Date: 2005-08-19T22:00:46Z
• Authors: S. Sadofev; S. Blumstengel; J. Cui; J. Puls; S. Rogaschewski; P. Schäfer; Yu. G. Sadofyev; F. Henneberger
• Keywords: Lattice constant; Wide-bandgap semiconductor

We report on a specific growth procedure combining low-temperature of ZnMgO and postgrowth annealing at intermediate temperatures. Despite the large lattice misfit induced by sapphire substrate, layer-by-layer is accomplished up to phase-separation limit found c-lattice constant 0.5136nm Mg mole fraction 0.40. The allows us grow quantum wells with atomically smooth interfaces in wide range structural designs exhibiting prominent emission features room temperature.