A microscopic model of electron transport in quantum dot infrared photodetectors
Hamiltonian (control theory)
DOI:
10.1063/1.2354321
Publication Date:
2006-10-17T17:20:59Z
AUTHORS (5)
ABSTRACT
A theoretical model describing the electron transport in vertical conductivity quantum dot infrared photodetectors is presented. The carrier wave functions and energy levels were evaluated using strain dependent eight-band k∙p Hamiltonian used to calculate all intra- interperiod transition rates due interaction with phonons electromagnetic radiation. longitudinal acoustic radiation was treated perturbatively within framework of Fermi’s golden rule, while optical considered taking into account their strong coupling electrons. system rate equations then formed, from which macroscopic device output parameters such as dark current responsivity, well microscopic information about distribution dots continuum states, could be extracted. has been applied simulate current, midinfrared photoresponse an experimentally realized [Chen et al., J. Appl. Phys. 89, 4558 (2001)], a good agreement experiment obtained. Being free any fitting or phenomenological parameters, should useful tool design prediction characteristics existing other types photodetectors.
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