Direct determination of Mn occupations in Ga1−xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy

• DOI: 10.1063/1.2354442
• Publication Date: 2006-09-18T22:11:07Z
• Authors: Shiqiang Wei; Wensheng Yan; Zhihu Sun; Qinghua Liu; Wenjie Zhong; Xinyi Zhang; Hiroyuki Oyanagi; Ziyu Wu
• Keywords: XANES; Magnetic semiconductor; X-Ray Spectroscopy; X-ray absorption spectroscopy

X-ray absorption near-edge structure (XANES) spectroscopy is used to study the features of occupation sites Mn dopants in Ga1−xMnxN dilute magnetic semiconductors (DMSs) with zinc-blende structure. Theoretical XANES spectra are calculated for representative models atoms GaN lattice. It shown that substitutional characterized by a preedge peak at 2.0eV and postedge multiple-scattering 29.1eV. The peaks shift position drop intensity dramatically interstitial MnI MnGa–MnI dimer, then disappear completely clusters. experimental spectrum Ga0.990Mn0.010N almost reproduced GaMnN Mn.