Modeling the water related trap state created in pentacene transistors

• DOI: 10.1063/1.2396924
• Publication Date: 2006-11-22T01:38:39Z
• Authors: K. P. Pernstich; D. Oberhoff; C. Goldmann; B. Batlogg
• Keywords: Pentacene; Subthreshold conduction; Trap (plumbing)

The authors report on the modeling of water related trap state in pentacene single crystal field-effect transistors that is created by a prolonged application gate voltage [C. Goldmann et al., Appl. Phys. Lett. 88, 063501 (2006)]. find narrow energy to be appropriate explain steplike feature measured subthreshold region transfer characteristic. forms an interface layer next insulator and centered at 430±50meV above valence band edge. density increases from (2to10.5)×1018∕cm3 during bias stress. knowledge details this defect can help identify physical chemical origin state.