Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

• DOI: 10.1063/1.2431567
• Publication Date: 2007-01-12T16:03:30Z
• Authors: Y. C. Lin; H. Yamaguchi; E. Y. Chang; Y. C. Hsieh; M. Ueki; Y. Hirayama; C. Y. Chang
• Keywords: Electron Mobility

The growth of the AlGaSb∕InAs high-electron-mobility transistor (HEMT) epitaxial structure on Si substrate is investigated. Buffer layers consisted UHV/chemical vapor deposited grown Ge∕GeSi and molecular beam epitaxy-grown AlGaSb∕AlSb∕GaAs were used to accommodate strain induced by large lattice mismatch between HEMT substrate. crystalline quality was examined x-ray diffraction, transmission electron microscopy, atomic force microscopy. Finally, very high room-temperature mobility 27300cm2∕Vs achieved. It demonstrated that a very-high-mobility can be achieved with properly designed buffer layers.