Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

• DOI: 10.1063/1.2777181
• Publication Date: 2007-08-31T23:12:49Z
• Authors: C. T. Huang; C. L. Hsin; K. W. Huang; C. Y. Lee; P. H. Yeh; U. S. Chen; L. J. Chen
• Keywords: Erbium

Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped exhibit room temperature photoluminescence at wavelength 1.54μm, ideal for optical communication. From I-V measurements, resistivity 4.2at.% Si was determined to be 1.5×10−2Ωcm. were found possess excellent field emission properties enhancement factor high 1260. rich variety enhanced physical exhibited by points versatile applications advanced devices.