Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

• DOI: 10.1063/1.2829814
• Publication Date: 2008-01-15T04:57:54Z
• Authors: M. J. Lee; Y. Park; S. E. Ahn; B. S. Kang; C. B. Lee; K. H. Kim; W. X. Xianyu; I. K. Yoo; J. H. Lee; S. J. Chung; Y. H. Kim; C. S. Lee; K. N. Choi; K. S. Chung
• Keywords: Non-blocking I/O; Bistability

In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and diffraction Analysis (XRD) on Ti doped samples fabricated under various conditions. We discovered that a high initial resistivity was required for undergo switching, presence of metallic Ni content these determined by XPS. XRD data also showed grown with relative (200) orientation preferred over those (111) orientation.