Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

• DOI: 10.1063/1.2921835
• Publication Date: 2008-05-17T22:06:18Z
• Authors: H. Tanoto; S. F. Yoon; W. K. Loke; K. P. Chen; E. A. Fitzgerald; C. Dohrman; B. Narayanan
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness the sample where first few monolayers were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to without such a process, indicating better planarity. From (004) x-ray diffraction rocking curve measurement, full width at half maximum layer MEE 40% lower that crystal quality. Furthermore, it found experienced early relaxation. As process promotes two-dimensional growth, nucleation initiated has fewer islandlike formations. This leads pseudomorphically grown layer, which experiences higher strain with more formations, most relaxation occurs free islands. Therefore, for same thickness, relaxed first.