Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel

• DOI: 10.1063/1.2955731
• Publication Date: 2008-07-24T22:49:08Z
• Authors: V. V. Popov; A. N. Koudymov; M. Shur; O. V. Polischuk
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

We show that voltage variations at a short gate can effectively tune higher-order ungated plasmon resonances in field-effect transistors (FETs). These may be excited by incoming terahertz radiation with much greater efficiency than the gated resonances. calculate spectra of absorption frame rigorous electromagnetic approach, which allows us to estimate resistance. Based on calculation results, we explain behavior different terms alternating-current FET equivalent circuit. The results help design high performance plasmonic devices operating frequency range.