Charging effect of Al2O3 thin films containing Al nanocrystals

• DOI: 10.1063/1.2994695
• Publication Date: 2008-10-12T08:39:20Z
• Authors: Y. Liu; T. P. Chen; W. Zhu; M. Yang; Z. H. Cen; J. I. Wong; Y. B. Li; S. Zhang; X. B. Chen; S. Fung
• Keywords: 0103 physical sciences; :Engineering::Electrical and electronic engineering::Nanoelectronics [DRNTU]; 01 natural sciences

In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.