Stressed multidirectional solid-phase epitaxial growth of Si

• DOI: 10.1063/1.3091395
• Publication Date: 2009-04-27T22:22:12Z
• Authors: N. G. Rudawski; K. S. Jones; S. Morarka; M. E. Law; R. G. Elliman
• Keywords: Recrystallization (geology)

The study of the solid-phase epitaxial growth (SPEG) process Si (variously referred to as epitaxy, regrowth, crystallization, and recrystallization) amorphized via ion implantation has been a topic fundamental technological importance for several decades. Overwhelmingly, SPEG studied (and viewed) single-directional where an advancing front between amorphous crystalline phases only one specific crystallographic orientation. However, it pertains device processing, must actually be considered multidirectional (or patterned) rather than bulk in nature with evolving interface having multiple orientations. Moreover, due increasingly ubiquitous stresses presented during typical Si-based fabrication, there is great interest specifically studying stressed-SPEG process. This work reviews progress made understanding and, more importantly, stressed For reviewed herein, (001) wafers ⟨110⟩-aligned, intrinsically Si3N4/SiO2 patterning consisting square line structures were used unmasked regions substrate implantation. It revealed that generated from patterning, both structures, alter kinetics geometry can influence formation mask-edge defects which form different degrees per differences by each type patterning. Likewise, shown application external stress wafer bending specimens without also interface. Finally, effect addition SPEG-enhancing impurities observed evolution interface, thus suggesting influences on are much less those dopants. Within context prior work, attempts correlate observations patterned herein. argued this review, ultimately appears research performed cannot reasonably extended