Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon

• DOI: 10.1063/1.337198
• Publication Date: 2002-07-26T13:05:20Z
• Authors: O. O. Awadelkarim; H. Weman; B. G. Svensson; J. L. Lindström
• Keywords: Deep-level transient spectroscopy; Electron beam processing; Isothermal process

Isothermal annealing of electron-irradiated Czochralski silicon samples (n-type) has been performed at 335 °C. The process was studied using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). dominating level in the DLTS spectra directly after irradiation is located ∼0.18 eV below conduction band previously assigned to a vacancy-oxygen center by other authors. During anneal concentration centers decreases, simultaneously new level, ∼0.20 band, grows up. It shown that defect giving rise this may be vacancy related. PL are dominated G line (969 meV) C (790 meV). disappears rapidly, while still present 320 min heat treatment some lines appear, e.g., P (767 950 meV. Based on kinetics, it speculated 950-meV