Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

• DOI: 10.1063/1.3525610
• Publication Date: 2010-12-15T00:01:45Z
• Authors: S. Hertenberger; D. Rudolph; M. Bichler; J. J. Finley; G. Abstreiter; G. Koblmüller
• Keywords: Chemical beam epitaxy; Crystal (programming language)

We investigated the interwire distance dependence on growth kinetics of vertical, high-yield InAs nanowire arrays Si(111) grown by catalyst-free selective area molecular beam epitaxy (MBE). Utilizing lithographically defined SiO2 nanomasks with regular hole patterns, and site-selective vertically (111)-oriented nanowires was achieved very high yields ∼90 percent. Interestingly, yield ordered independent initial stages. Significant size variation in found to depend critically time. Two regimes were identified—(i) a competitive regime shorter thinner for narrow distances (ii) diffusion-limited wider distances, providing good estimates surface diffusion lengths. Surprisingly, despite these size-dependent effects geometries remained unaltered uniform, almost nontapered morphologies even over large density (∼mid−106–109 cm−2 range). X-ray diffraction further confirmed vertical (111) directionality low crystal tilt rocking curve widths (ω scans) as ∼0.6°. These findings demonstrate capability precisely tailor position well-oriented III-V semiconductor through noncatalytic MBE provide an important step toward fully integrated, uniform array-on-Si devices.