Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

• DOI: 10.1063/1.355889
• Publication Date: 2002-07-26T13:47:50Z
• Authors: K. Sreenivas; Ian Reaney; T. Maeder; N. Setter; C. Jagadish; R. G. Elliman
• Keywords: Auger electron spectroscopy; Rutherford backscattering spectrometry

The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses interfacial Ti-bonding layers. Reactions the Pt/Ti/SiO2/Si interface were examined as a function various annealing conditions temperature range 200–800 °C by using Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffraction, and transmission microscopy. Thermal treatment oxygen was found to cause rapid oxidation Ti layer, accompanied migration into Pt film. Diffusion through grain boundaries mainly responsible for adverse reactions at loss mechanical integrity. Thin (10 nm) layers resulted depletion bonding layer causing serious adhesion problems, whereas thicker films (100 caused formation TiO2−x Pt-grain boundaries, ultimately encapsulating surface insulating TiO2 layer. Improved stability metallization compatible ferroelectric thin film processing, achieved incorporating well reacted situ, depositing high temperature.