Use of Raman spectroscopy to determine the site occupancy of dopants in BaTiO3

• DOI: 10.1063/1.3592192
• Publication Date: 2011-06-15T11:44:41Z
• Authors: J. Pokorný; U. M. Pasha; L. Ben; O. P. Thakur; D. C. Sinclair; I. M. Reaney
• Keywords: 02 engineering and technology; 0210 nano-technology

Chemical doping is one of the major methods by which properties BaTiO3 are modified to induce various device characteristics. Doping strategies generally separated into iso- and alio-valent (donors acceptors) A- B-site species within perovskite structure. The A1g octahedral breathing mode at ∼800 cm−1 in Raman inactive for compositions with single species. However, this becomes active if more than present, including titanium vacancies, VT′′′′. Moreover, relative intensity qualitatively related concentration replacing Ti B-site. This article illustrates some clear cases where can be utilized verify site occupancy dopants when used conjunction conventional indirect such as x-ray diffraction (Vegard’s Law) dielectric measurements a function temperature.