Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

• DOI: 10.1063/1.3630119
• Publication Date: 2011-09-02T14:37:08Z
• Authors: Yao-Feng Chang; Ting-Chang Chang; Chun-Yen Chang
• Keywords: 0103 physical sciences; 01 natural sciences

We investigated multilevel resistance switching characteristics of the thin FeOx transition layer in a TiN/SiO2/FeOx/Fe structure by controlling the current compliance and stopped voltage during the set and reset processes, respectively. It is observed that the resistive state could be easily tunable by controlling external electric conditions. The multilevel memristive mechanism was characterized by distinguishing the electrical behaviors statistically, inferring that the reset process is associated with the mobile-ion-assisted electrochemical redox. Moreover, the set process is also modeled by power dissipation behaviors. The presented mathematical and physical model provides a possibility to elucidate a universal mechanism for bipolar multilevel memristor.