Schottky contact and the thermal stability of Ni on n-type GaN

• DOI: 10.1063/1.363822
• Publication Date: 2002-07-26T12:37:13Z
• Authors: J. D. Guo; F. M. Pan; M. S. Feng; R. J. Guo; P. F. Chou; C. Y. Chang
• Keywords: Thermal Stability; Wide-bandgap semiconductor; Metal–semiconductor junction

The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance–voltage (C–V) current–density–temperature (J–T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as deposited the GaN film, which affects markedly. thermal stability also investigated annealing these specimens at various temperatures. Specimen temperatures above 200 °C leads formation nitrides Ni3N Ni4N interface GaN. These interfacial compounds change 1.0 0.8 C–V J–T Comparisons characteristics with those Pt, Pd, Au, Ti are discussed.