Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

• DOI: 10.1063/1.3651762
• Publication Date: 2011-10-15T00:06:57Z
• Authors: Mahesh Kumar; Basanta Roul; Arjun Shetty; Mohana K. Rajpalke; Thirumaleshwara N...; A. T. Kalghatgi; S. B. Krupanidhi
• Keywords: Indium nitride

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of QDs was verified transmission electron microscopy, and the chemical bonding configurations examined x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to bulk InN, arising from size dependent confinement effect. The interdigitated electrode pattern created current–voltage (I–V) characteristics studied in metal–semiconductor–metal configuration temperature range 80–300 K. I–V lateral grown explained using trap model.