Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy

• DOI: 10.1063/1.365711
• Publication Date: 2002-07-26T13:52:43Z
• Authors: G. Popovici; G. Y. Xu; A. Botchkarev; W. Kim; H. Tang; A. Salvador; H. Morkoç; R. Strange; J. O. White
• Keywords: Wide-bandgap semiconductor

Photoluminescence, Raman, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive tensile stress determined the Raman shift of phonon lines is due to growth conditions rather than presence in film. photoluminescence peak near band-to-band transitions also shifted larger (smaller) energies (tensile) stress. study longitudinal optical A1 branch shows that its line shape affected mostly crystalline quality