Temperature-dependence of the internal efficiency droop in GaN-based diodes

• DOI: 10.1063/1.3658031
• Publication Date: 2011-11-04T22:53:48Z
• Authors: J. Hader; J. V. Moloney; S. W. Koch
• Keywords: 0103 physical sciences; 7. Clean energy; 01 natural sciences

The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.