Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature

• DOI: 10.1063/1.3663309
• Publication Date: 2011-12-02T00:20:49Z
• Authors: ShaoJun Ma; Hassanet Sodabanlu; Kentaroh Watanabe; Masakazu Sugiyama; Yoshiaki Nakano
• Keywords: Stress relaxation

Precise strain compensation for lattice-mismatched quantum wells is crucial obtaining high performance devices such as well solar cells. High-accuracy in situ curvature monitoring a more efficient tool to adjust growth conditions perfect balancing, and we have achieved measurement during of InGaAs/GaAsP multiple by metal organic vapor phase epitaxy. We also developed the calculation model taking into account thermal expansion lattice relaxation effects based on Stoney’s equation. The measured periodical behavior corresponds compressive InGaAs layers tensile GaAsP barrier fits perfectly with theoretical curve assuming structural parameters (thicknesses atomic contents) obtained x-ray diffraction analysis, confirming correctness method. Considering proper coefficients GaAsP, much accurate fitting results curvature.